t4 - lds - 0223 -1, rev . 1 (1 20178 ) ?2011 microsemi corporation page 1 of 5 2n2857ub available on commercial versions rf and microwave discrete low power transistors qualified per mil -prf- 19500/343 qualified levels : jan, jantx, and jantxv description the 2n285 7 ub is a military qualified silicon npn transistor (also available in commercial version) , designed for uhf equipment and other high - reliability applications . common a pplications include low noise amplifier; oscillator, and mixer applications. microsemi a lso offers numerous other products to meet higher and lower power voltage regulation applications. ub package also available in : to - 72 package (axial - leaded) 2n2857 import ant: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent to jedec registered 2n2857. ? silicon npn, ub packaged uhf t ransistor . ? maximum u nilateral g ain = 13 db (typ) @ 500 mhz . ? jan, jantx, and jantxv military qualified versions available per mil - prf - 19500/343. ? rohs compliant version available (commercial grade only) . applications / benefits ? low - power, ultra - high frequency transistor . ? low - profile ceramic surface mount package. m axim um ratings @ t a = + 25 o c msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.mic rosemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +200 o c collector - emitter voltage v ceo 15 v collector - base voltage v cbo 30 v emitter - base voltage v ebo 3 v thermal resistance junction - to - ambient r ? ja 400 o c /w thermal resistance junction - to - solder pad r ? j sp 210 o c/w steady - state power dissipation (1) p d 200 mw collector current i c 40 ma notes : 1. derate linearly 1.14 mw/c for t a > +25 c. downloaded from: http:///
t4 - lds - 0223 -1, rev . 1 (1 20178 ) ?2011 microsemi corporation page 2 of 5 2n2857ub mechanical and packaging ? case: ceram ic . ? terminals: gold p lating over n ickel underplate. rohs compliant m atte/ t in available on commercial grade only. ? marking: part number, date code, manufacturers id. ? tape & reel option: standard per eia - 418d . consult factory for quantities. ? w eight: < 0.04 grams . ? see package dimensions on last page. part nomenclature jan 2n 2857 ub (e3) reliability level jan =jan level jantx =jan level jantxv=jantxv level blank = commercial jedec type number ( see electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount p ackage symbols & definitions symbol definition i c collector current (dc) . i b base current (dc) . t a ambient or free air temperature . t c case temperature. v cb collector to base voltage (dc) . v eb emitter to base voltage (dc) . downloaded from: http:///
t4 - lds - 0223 -1, rev . 1 (1 20178 ) ?2011 microsemi corporation page 3 of 5 2n2857ub electrical characteristics @ t c = +25 o c off characteristics test conditions symb ol value min. typ. max. unit collector - emitter breakdown voltage (i c = 3.0 ma, bias condition d ) v (br) ceo 15 - - v collector to emitter cutoff current (v ce = 16 v, bias condition c ) i ces - - 100 na emitter to base cutoff current (v eb = 3 v, bias condition d) i ebo - - 10 a collector to base cutoff current (v cb = 15 v , bias condition d) i cbo - - 10 na on characteristics test conditions symbol value min. typ. max. unit forward current transfer ratio (i c = 3.0 ma, v ce = 1.0 v) h fe 30 - 150 collector - emitter saturation voltage (i c = 10 ma, i b = 1 ma ) v ce(sat) - 0.4 v base - emitter saturation voltage (i c = 10 ma, i b = 1 ma ) v be(sat) - 1.0 v dynamic characteristics test conditions symbol value unit min. typ. max. magn itude of common emitter small signal short circuit forward current transfer ratio (v ce = 6 v, ic = 5 ma, f = 100 mhz ) |h fe | 10 - 21 collector - base time constant (i e = 2.0 ma, v cb = 6.0 v, f = 31.9 mhz) r b c c 4 - 15 pf collector to base C feedback capa citance (i e = 0 ma, v cb = 10 v, 100 khz < f < 1 mhz c cb 1.0 pf nois e figur e (5 0 ohms) (i c = 1.5 ma, v ce = 6 v, f = 450 mhz, r g = 50 ?) f 4.5 db small signal power gain (common emitter) (i e = 1.5 ma, v ce = 6 v, f = 450 mhz g pe 12.5 21 db downloaded from: http:///
t4 - lds - 0223 -1, rev . 1 (1 20178 ) ?2011 microsemi corporation page 4 of 5 2n2857ub gra phs time (sec) figure 1 maximum thermal impedance theta ( o cw) downloaded from: http:///
t4 - lds - 0223 -1, rev . 1 (1 20178 ) ?2011 microsemi corporation page 5 of 5 2n2857ub package dimensions symbol dimensions note symbol dimensions note inc h millimeters inc h millimeters min max min max min max min max bh .046 .056 1.17 1.42 ls1 .035 .039 0.89 1.02 bl .115 .128 2.92 3.25 ls2 .071 .079 1.80 2.01 bw .085 .108 2.16 2.74 lw 0.16 0.24 0.41 0.61 cl .128 3.25 r .008 0.20 cw .108 2.74 r1 .012 0.31 ll1 .022 .038 0.56 0.97 r2 .022 .056 ll2 .017 .035 0.43 0.89 not es: 1 . dimen sio ns are in in ch es. 2 . m illim ete rs a re gi ven fo r ge ne ral in for ma t io n onl y. 3 . hat che d areas on pack ag e deno te metal li zed area s. 4 . pad 1 = b ase , pad 2 = emi tt e r, pad 3 = c ol l ec to r, pad 4 = s hi e ldi ng c on n ec ted to the li d. 5 . in ac co rd an ce wi th as me y 14 .5m, diame ters a re eq uival en t to x sy mbolog y. downloaded from: http:///
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